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Defects in silicon nanowires
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10.1063/1.2191830
/content/aip/journal/apl/88/14/10.1063/1.2191830
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2191830
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical ESR spectra of SiNWs at different temperatures. The signal intensity was reduced by ten times for spectrum and three times for spectrum, respectively. The hyperfine splitting line at was enlarged three times for clarification. All spectra were excited at a microwave power of .

Image of FIG. 2.
FIG. 2.

Saturation curves of ESR signal intensity for applied microwave power.

Image of FIG. 3.
FIG. 3.

ESR spectra of fresh and oxidized SiNWs at room temperature.

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/content/aip/journal/apl/88/14/10.1063/1.2191830
2006-04-04
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Defects in silicon nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2191830
10.1063/1.2191830
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