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Raman spectra of the mechanically strained Ge. The position of Ge–Ge peak of strained Ge indicates 0.32% for the biaxial tensile strain and 0.45% for the uniaxial tensile strain.
Experimental forward characteristics of and Schottky diodes with and without mechanical strain.
characteristic of and Schottky diodes with and without mechanical strain.
Theoretical calculation and the experimental data of the shift of conduction band of Si and Ge under the external mechanical strain.
The numerical value of parameters used in the calculation.
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