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Strained Pt Schottky diodes on -type Si and Ge
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10.1063/1.2191831
/content/aip/journal/apl/88/14/10.1063/1.2191831
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2191831

Figures

Image of FIG. 1.
FIG. 1.

Raman spectra of the mechanically strained Ge. The position of Ge–Ge peak of strained Ge indicates 0.32% for the biaxial tensile strain and 0.45% for the uniaxial tensile strain.

Image of FIG. 2.
FIG. 2.

Experimental forward characteristics of and Schottky diodes with and without mechanical strain.

Image of FIG. 3.
FIG. 3.

characteristic of and Schottky diodes with and without mechanical strain.

Image of FIG. 4.
FIG. 4.

Theoretical calculation and the experimental data of the shift of conduction band of Si and Ge under the external mechanical strain.

Tables

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Table I.

The numerical value of parameters used in the calculation.

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/content/aip/journal/apl/88/14/10.1063/1.2191831
2006-04-05
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strained Pt Schottky diodes on n-type Si and Ge
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2191831
10.1063/1.2191831
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