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Copper drift in high-dielectric-constant tantalum oxide thin films under bias temperature stress
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10.1063/1.2191832
/content/aip/journal/apl/88/14/10.1063/1.2191832
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2191832
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

BTS results on capacitors at with a bias of .

Image of FIG. 2.
FIG. 2.

BTS results on capacitors at with a bias of . Flat-band voltage systematically shifts in the negative direction.

Image of FIG. 3.
FIG. 3.

Charge per diffusion/drift into as a function of BTS time for different biasing conditions at .

Image of FIG. 4.
FIG. 4.

capacitors at and sweep rate. TVS peak grows with biasing time in capacitors.

Image of FIG. 5.
FIG. 5.

TVS ( sweep) results on capacitors at and .

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/content/aip/journal/apl/88/14/10.1063/1.2191832
2006-04-03
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Copper drift in high-dielectric-constant tantalum oxide thin films under bias temperature stress
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2191832
10.1063/1.2191832
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