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Process sequence to achieve desired autocorrelation length using electrostatic deposition of particles and subsequent dry etching.
AFM images (, vertical ) of final surfaces with (a) 15%, (b) 33%, and (c) 53% coverages of hillocks. (d) Details of a single hillock. Approximate width is (particle diameter) and height is about .
Comparison of theoretical prediction from Eq. (3) (solid line) and experimental data (open circles) on silicon surfaces at a given particle size and etch depth.
Autocorrelation length as a function of coverage and particle size as predicted by the model [Eq. (3)].
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