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Crossover in thermal transport mechanism in nanocrystalline silicon
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10.1063/1.2192145
/content/aip/journal/apl/88/14/10.1063/1.2192145
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2192145
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Atomic positions and bonding in a high-angle (001) twist grain boundary in silicon with GB separation . Two grains are separated by two GBs, one at the center and one at the edges of the simulation box. Periodic boundary conditions are used in all directions.

Image of FIG. 2.
FIG. 2.

The participation ratio vs frequency for amorphous silicon, (111) GB and (001) GB, (001) GB, and perfect crystal structures. Insets show projections of Cartesian components vs (left) and vs (right) of unit normalized polarization vectors for a typical mode around frequency.

Image of FIG. 3.
FIG. 3.

Thermal conductivity in the direction normal to the GB plane divided by the GB separation, which is the nominal GB conductance, as a function of . Two data sets are for thermal conductivity obtained in MD simulations and from the Allen-Feldman theory of disordered solids. Individual GB conductance of GB (001) is shown at .

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/content/aip/journal/apl/88/14/10.1063/1.2192145
2006-04-04
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Crossover in thermal transport mechanism in nanocrystalline silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2192145
10.1063/1.2192145
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