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Single-walled carbon nanotubes as shadow masks for nanogap fabrication
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View: Figures


Image of FIG. 1.
FIG. 1.

Sample fabrication steps. (a) Single-walled nanotubes are transferred by pressing the carrier chip onto the resist-patterned sample. SWNT sections that were suspended on the carrier chip adhere preferentially to the resist and break off from the rest of the original nanotube. For clarity, only two trenches are shown and at a larger scale; actual device contains 12 sets of ten wires each. (b) Detail of central area of the sample: SWNT now rests over lithographically defined trenches in the -thick resist. (c) Up to Pt is deposited over the sample, forming a wire and a nanometer-scale gap opening underneath the overhanging nanotube. (d) Excess metal is removed after lift-off.

Image of FIG. 2.
FIG. 2.

[(a) and (b)] AFM scans of device, showing a gap in the Pt metal line formed by the SWNT shadow mask. (b) Scans of two different wires with gaps, produced using the same nanotube. (c) Transversal line scan of a Pt wire, showing that the roughnesses of the Pt surface and of the substrate are similar (the rms roughness for both is ).

Image of FIG. 3.
FIG. 3.

(a) Current-voltage data for four nanogaps, showing nonlinear dependence characteristic of direct tunneling. The devices measured here were obtained from four parallel wires “cut” by the same nanotube. Dashed curves: calculated fits to the data using the Simmons model (Ref. 16). Calculated gap widths are, from top to bottom, 1.3, 1.8, and for the last two curves. Inset: data for a -thick Pt wire with no nanogap. (b) Histogram of gap widths obtained from tunneling data for 66 different wires. Most of the widths fall within the range.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Single-walled carbon nanotubes as shadow masks for nanogap fabrication