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Voltage gain dependence of the negative differential conductance width in silicon single-hole transistors
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10.1063/1.2192637
/content/aip/journal/apl/88/14/10.1063/1.2192637
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2192637
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Measured characteristics of the fabricated SHT at RT. Both in linear scale and logarithmic scale are shown.

Image of FIG. 2.
FIG. 2.

Measured characteristics of SHT in Fig. 1 at various at RT. Large NDC with PVCR of 106 and small FWHM of is observed.

Image of FIG. 3.
FIG. 3.

Measured Coulomb diagram of SHT in Fig. 1 at RT.

Image of FIG. 4.
FIG. 4.

Measured and calculated gain dependence of FWHM of NDC at RT. Gate oxide thickness and etching process for defining narrow channel are shown in each SHT. Dashed line is the ideal FWHM of CB oscillation at RT and shown just for a reference to indicate how sharp the NDC is. It does not mean that the FWHM should be limited by that line. In the calculation based on the model of Ref. 19, and are fixed to 0.73 and , respectively.

Image of FIG. 5.
FIG. 5.

Potential profiles of SETs for (a) zero , (b) large in a low-gain SET, and (c) large in a high-gain SET. For simplicity, SET is shown instead of SHT.

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/content/aip/journal/apl/88/14/10.1063/1.2192637
2006-04-03
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Voltage gain dependence of the negative differential conductance width in silicon single-hole transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2192637
10.1063/1.2192637
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