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Measured characteristics of the fabricated SHT at RT. Both in linear scale and logarithmic scale are shown.
Measured characteristics of SHT in Fig. 1 at various at RT. Large NDC with PVCR of 106 and small FWHM of is observed.
Measured Coulomb diagram of SHT in Fig. 1 at RT.
Measured and calculated gain dependence of FWHM of NDC at RT. Gate oxide thickness and etching process for defining narrow channel are shown in each SHT. Dashed line is the ideal FWHM of CB oscillation at RT and shown just for a reference to indicate how sharp the NDC is. It does not mean that the FWHM should be limited by that line. In the calculation based on the model of Ref. 19, and are fixed to 0.73 and , respectively.
Potential profiles of SETs for (a) zero , (b) large in a low-gain SET, and (c) large in a high-gain SET. For simplicity, SET is shown instead of SHT.
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