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Sample structures for investigation of SGOI thickness dependence in oxidation induced Ge condensation process.
Final SiGe thickness dependent relaxation rate of SGOI layers with identical Ge fraction (15%, 30%). Samples (A) were oxidized at 1100 or . Data for samples (B) oxidized at are shown by solid circles. The result obtained by the proposed improved method is also shown by a double circle.
Influences of irradiation and postannealing on relaxation rate of SGOI layers with identical Ge fraction of 30% (SGOI thickness: ). Postannealing temperatures were (a) and (b) .
Hydrogen irradiation dependent (0, , ) TEM picture of SGOI layers with identical Ge fraction of 30% (SGOI thickness: ). Results obtained before and after postannealing ( for ) are compared. Relaxation rate and defect density of SGOI layers are shown in the figures.
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