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Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with irradiation and postannealing
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10.1063/1.2192644
/content/aip/journal/apl/88/14/10.1063/1.2192644
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2192644
/content/aip/journal/apl/88/14/10.1063/1.2192644
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/content/aip/journal/apl/88/14/10.1063/1.2192644
2006-04-04
2014-09-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H+ irradiation and postannealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2192644
10.1063/1.2192644
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