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(a) TEM micrograph of the SODI structure. (b) High-resolution TEM micrograph of the interfacial region between the top Si layer and buried insulator structure showing a sharp interface and defect-free crystalline Si layer.
Influence of the annealing temperature on the breakdown electric fields of the SODI structure.
Simulated output characteristics of conventional -based SOI and SODI devices.
(Color online) Simulated 3D temperature distributions of devices in (a) -based SOI and (b) SODI.
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