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Fabrication of silicon-on-/diamondlike-carbon dual insulator using ion cutting and mitigation of self-heating effects
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10.1063/1.2192981
/content/aip/journal/apl/88/14/10.1063/1.2192981
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2192981
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) TEM micrograph of the SODI structure. (b) High-resolution TEM micrograph of the interfacial region between the top Si layer and buried insulator structure showing a sharp interface and defect-free crystalline Si layer.

Image of FIG. 2.
FIG. 2.

Influence of the annealing temperature on the breakdown electric fields of the SODI structure.

Image of FIG. 3.
FIG. 3.

Simulated output characteristics of conventional -based SOI and SODI devices.

Image of FIG. 4.
FIG. 4.

(Color online) Simulated 3D temperature distributions of devices in (a) -based SOI and (b) SODI.

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/content/aip/journal/apl/88/14/10.1063/1.2192981
2006-04-05
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication of silicon-on-SiO2/diamondlike-carbon dual insulator using ion cutting and mitigation of self-heating effects
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2192981
10.1063/1.2192981
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