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Correlation between optical properties and interface morphology of quantum wells
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View: Figures


Image of FIG. 1.
FIG. 1.

PL spectra of the QW grown on substrates with three different misorientations: nominally exact (001), 0.2°-off, and 0.6°-off (001). Inset: FWHM as a function of substrate miscut for these samples, compared to results from Ref. 13 and record narrow FWHM from optimized growth conditions as described in Ref. 10.

Image of FIG. 2.
FIG. 2.

Flattened AFM images of the GaAs (left) and (right) interfaces after selective etching for the three different misorientations. Full scale are 2.5, 3, and for the “exact,” 0.2°, and 0.6°-off (001) samples, respectively (dark grey corresponds to the lowest height).

Image of FIG. 3.
FIG. 3.

Flattened AFM image of the GaAs upper interface of a QW grown on an “exactly” (001) oriented surface, following a GI. The arrow shows the direction toward lower terraces. The amplitude of the full scale is .

Image of FIG. 4.
FIG. 4.

spectra of the QW for three different substrate misorientations and with a GI of . The spectra were acquired for positions separated by about .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Correlation between optical properties and interface morphology of GaAs∕AlGaAs quantum wells