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The open data points show the dependence of the electron concentration in the GaP:S grown at 500 and on . The electron concentrations in the GaPN:S grown with were also shown using the filled points.
Arrhenius plot of the temperature dependence of the electron concentration in the GaP and GaPN with . The slope in the GaPN was similar to that in the GaP. The electron concentration at would correspond to the S donor concentration, which acted as a dopant.
(a) and (b) show the temperature dependence of the electron mobility in the GaP(N):S and GaP(N):Te, respectively. The open and filled points indicate the electron mobilities in the GaP and GaPN, respectively. The electron concentrations indicated are RT values.
Schematic of the band structure in the -type GaPN at the near conduction band edge . The dotted and broken lines are the energy level of the donor level and Fermi level , respectively. The dark area below indicates the N-related deep levels. N-related deep levels would trap free electrons and be negatively charged. These N-related traps could act as the Coulomb scattering center even at RT.
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