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Electrical properties of -type GaPN grown by molecular-beam epitaxy
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View: Figures


Image of FIG. 1.
FIG. 1.

The open data points show the dependence of the electron concentration in the GaP:S grown at 500 and on . The electron concentrations in the GaPN:S grown with were also shown using the filled points.

Image of FIG. 2.
FIG. 2.

Arrhenius plot of the temperature dependence of the electron concentration in the GaP and GaPN with . The slope in the GaPN was similar to that in the GaP. The electron concentration at would correspond to the S donor concentration, which acted as a dopant.

Image of FIG. 3.
FIG. 3.

(a) and (b) show the temperature dependence of the electron mobility in the GaP(N):S and GaP(N):Te, respectively. The open and filled points indicate the electron mobilities in the GaP and GaPN, respectively. The electron concentrations indicated are RT values.

Image of FIG. 4.
FIG. 4.

Schematic of the band structure in the -type GaPN at the near conduction band edge . The dotted and broken lines are the energy level of the donor level and Fermi level , respectively. The dark area below indicates the N-related deep levels. N-related deep levels would trap free electrons and be negatively charged. These N-related traps could act as the Coulomb scattering center even at RT.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical properties of n-type GaPN grown by molecular-beam epitaxy