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Prismatic stacking faults in epitaxially laterally overgrown GaN
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Image of FIG. 1.
FIG. 1.

Correlation between structural and optical characteristics in an ELO triangular cross section. (a) A low-temperature CL spectrum acquired over a large area revealing three emission peaks. The luminescence intensity is plotted on a logarithmic scale. (b) Cross-section TEM image of the region of interest showing the presence of stacking faults. CL images from the same region corresponding to emission energies of (c) 3.41 and (d) .

Image of FIG. 2.
FIG. 2.

Bright-field TEM images of stacking faults in ELO GaN. The basal-plane stacking faults (horizontal) and the prismatic-plane stacking faults (vertical) are viewed under different diffraction conditions: (a) , (b) , (c) , and (d) . The visibility of the stacking faults depends on the displacement vector and diffraction vector . (a) and (b) require tilting the specimen by about , whereas (c) and (d) are taken close to the zone axis along the stripe direction.

Image of FIG. 3.
FIG. 3.

Schematic representation of lattice planes and directions in the [0001] projection. Shown are projections of the prismatic planes and their displacement vectors , as well as two of unit-cell vectors .

Image of FIG. 4.
FIG. 4.

Monochromatic CL images acquired from the ELO triangular cross section corresponding to (a) band-edge emission at , and (b) emission due to basal-plane stacking faults at .


Generic image for table
Table I.

Translation vector R and diffraction-contrast visibility of basal plane and prismatic staking faults in GaN. The visibility criteria is described in the text.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Prismatic stacking faults in epitaxially laterally overgrown GaN