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Transient lateral photovoltaic effect in heterojunctions of and Si
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View: Figures


Image of FIG. 1.
FIG. 1.

Transient lateral open-circuit photovoltages after excitation with a laser pulse on the LSMO/Si junction in the direction at . Numbers in the figure denote the coordinate values of the laser spot positions. The top inset shows the layout of the sample with contacts ( , 0), ( , 0), and the laser spot . The bottom one displays the schematic circuit of the measurement.

Image of FIG. 2.
FIG. 2.

Dependence of the peak photovoltage on the position of the laser spot in the direction and direction (the inset).

Image of FIG. 3.
FIG. 3.

Three-dimensional plot for the as a function of the position of the laser spot.

Image of FIG. 4.
FIG. 4.

Lateral peak photovoltage (solid circle point), and transverse peak photovoltages (solid square point) and (open square point), as a function of the position of the laser spot in the direction at . The open circle points are a simple addition of transverse photovoltages, . The lines are guides for the eye. The inset displays the schematic electrode setting for the , and measurements.

Image of FIG. 5.
FIG. 5.

Schematic band structure for the LSMO/Si junction, and the schematic movement of the photon created carriers for the system irradiated by the laser spot.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transient lateral photovoltaic effect in p-n heterojunctions of La0.7Sr0.3MnO3 and Si