Full text loading...
(a) Schematic structure of cross-sectional DCT. (b) Double channel layer structures of three samples studied here.
(a) NDR characteristics of a DCT with a gate length of at (, ). (b) Temperature dependence of the NDR effects for the DCT. The NDR characteristic is clear up to .
Wave functions at each subband energy in the dual channel structure with the schematic structure of the conduction band (sample A). , , and indicate the thicknesses of the low mobility, barrier, and high mobility layers, respectively. The probability of electrons at the third energy level increases at the low mobility layer. The energy separation between the fundamental and the third levels is about .
NDR characteristic and its temperature dependence for sample B with the gate grounded.
NDR characteristic and its temperature dependence for sample C, which has a pseudomorphic high mobility channel. The NDR effects are observed at temperatures up to .
Article metrics loading...