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InGaAs dual channel transistors with negative differential resistance
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10.1063/1.2193728
/content/aip/journal/apl/88/14/10.1063/1.2193728
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2193728
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic structure of cross-sectional DCT. (b) Double channel layer structures of three samples studied here.

Image of FIG. 2.
FIG. 2.

(a) NDR characteristics of a DCT with a gate length of at (, ). (b) Temperature dependence of the NDR effects for the DCT. The NDR characteristic is clear up to .

Image of FIG. 3.
FIG. 3.

Wave functions at each subband energy in the dual channel structure with the schematic structure of the conduction band (sample A). , , and indicate the thicknesses of the low mobility, barrier, and high mobility layers, respectively. The probability of electrons at the third energy level increases at the low mobility layer. The energy separation between the fundamental and the third levels is about .

Image of FIG. 4.
FIG. 4.

NDR characteristic and its temperature dependence for sample B with the gate grounded.

Image of FIG. 5.
FIG. 5.

NDR characteristic and its temperature dependence for sample C, which has a pseudomorphic high mobility channel. The NDR effects are observed at temperatures up to .

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/content/aip/journal/apl/88/14/10.1063/1.2193728
2006-04-05
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InGaAs dual channel transistors with negative differential resistance
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2193728
10.1063/1.2193728
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