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(a) Schematic density of states for metallic (above) and the anticipated band diagram of a junction (below) for . The states near the chemical potential in are derived from overlap of the upper Hubbard band (UHB) and derived band. (b) Corresponding diagrams for .
Resistivity of 0.01 and substrates and films with various thicknessess. The resistivity of is normalized to the value of the thickest film at to emphasize the systematic change in .
Temperature dependent current-voltage characteristics of (a) and (b) . Capacitance characteristics of (c) and (d) . Note that the scale in (a) is different between forward and reverse biases. The curves are guides to the eye.
Temperature dependence of the built-in potential of the junctions, as derived from capacitance measurements as in Fig. 3(c) and 3(d) near zero bias. Data for decreasing temperature (circles) and increasing temperature (rectangles) show no hysteresis.
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