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Rectifying junctions as a probe of the surface electronic structure of
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Schematic density of states for metallic (above) and the anticipated band diagram of a junction (below) for . The states near the chemical potential in are derived from overlap of the upper Hubbard band (UHB) and derived band. (b) Corresponding diagrams for .

Image of FIG. 2.
FIG. 2.

Resistivity of 0.01 and substrates and films with various thicknessess. The resistivity of is normalized to the value of the thickest film at to emphasize the systematic change in .

Image of FIG. 3.
FIG. 3.

Temperature dependent current-voltage characteristics of (a) and (b) . Capacitance characteristics of (c) and (d) . Note that the scale in (a) is different between forward and reverse biases. The curves are guides to the eye.

Image of FIG. 4.
FIG. 4.

Temperature dependence of the built-in potential of the junctions, as derived from capacitance measurements as in Fig. 3(c) and 3(d) near zero bias. Data for decreasing temperature (circles) and increasing temperature (rectangles) show no hysteresis.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Rectifying NdNiO3∕Nb:SrTiO3 junctions as a probe of the surface electronic structure of NdNiO3