banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Nitrogen-induced hindering of In incorporation in InGaAsN
Rent this article for


Image of FIG. 1.
FIG. 1.

XSTM images of (a) and (b) QWs with nominal concentrations and . The sample bias voltage was , and the tunneling current was . A few In atoms in the first atomic layer are denoted by arrows. indicates cleavage defects and for atomic steps. (c) Profile of the In concentration in the (open circles) and QWs (solid circles). The errors bars indicate the statistical errors. The dashed lines indicate the average composition in the central of the QWs.

Image of FIG. 2.
FIG. 2.

(Color online) EDS spectra obtained on [110] cross section of and QWs with nominal concentrations and . The line shows the and family spectra as acquired on the ternary well, whereas the filled region renders the spectrum as acquired on the quaternary well.

Image of FIG. 3.
FIG. 3.

(a) XPS spectra of (line) and (dashed line) layers grown in the same condition with nominal concentrations and . The Ga , In doublet , and In core level emissions are showed. The deconvolution of the lineshapes according to the procedure described in Ref. 11 is also reported. (b) In content in as a function of the In content in layers (both measured by XPS) grown in the same conditions, but for the N plasma. The straight line indicates the ideal case of full In incorporation. Inset: relative reduction of the In content, , as a function of the N content. Also included are XSTM (circle), EDS (triangle), and RBS-NRA (diamond) results.


Generic image for table
Table I.

Growth conditions of the samples investigated by the different techniques (column 1): partial pressure ratio (column 2), operating pressure in the growth chamber (column 3), and rf average power (column 4). In column 5 we report the beam equivalent pressure ratio (BPR). In column 6 we show the nitrogen content in the alloy, as estimated from HRXRD measurements on samples grown in the same conditions.


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nitrogen-induced hindering of In incorporation in InGaAsN