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Quantitative mobility spectrum analysis of heterostructures using variable-field hall measurements
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10.1063/1.2195011
/content/aip/journal/apl/88/14/10.1063/1.2195011
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2195011
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Measured sheet resistivity and sheet Hall coefficient of the heterostructure sample investigated.

Image of FIG. 2.
FIG. 2.

Calculated conductivity tensor elements and vs the magnetic field strength normal to the surface.

Image of FIG. 3.
FIG. 3.

Quantitative mobility spectrum for the sample delineating the 2DEG and bulk electron mobilities at . The dashed peak corresponds to the ghost hole carrier.

Image of FIG. 4.
FIG. 4.

Comparison of the extracted variable-field and measured single-field mobility and density data. (a) Temperature-dependent mobility and (b) temperature-dependent carrier density curves.

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/content/aip/journal/apl/88/14/10.1063/1.2195011
2006-04-05
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quantitative mobility spectrum analysis of AlGaN∕GaN heterostructures using variable-field hall measurements
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/14/10.1063/1.2195011
10.1063/1.2195011
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