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Impact of in situ carbon doping on implant damage and strain relaxation of epitaxial silicon germanium layer on silicon
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10.1063/1.2194893
/content/aip/journal/apl/88/15/10.1063/1.2194893
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/15/10.1063/1.2194893
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Rocking curves of SiGe layers for (a) as grown and (c) after B implantation and high temperature anneal. Rocking curves of SiGeC layers for (b) as grown and (d) after B implantation and high temperature anneal.

Image of FIG. 2.
FIG. 2.

Cross-sectional/plan-view TEM images after B implantation and high temperature anneal for (a)/(c) SiGe layers and (b)/(d) SiGeC layers.

Image of FIG. 3.
FIG. 3.

Cross-sectional TEM images after As implantation and high temperature anneal for (a) SiGe and (b) SiGeC.

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/content/aip/journal/apl/88/15/10.1063/1.2194893
2006-04-13
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of in situ carbon doping on implant damage and strain relaxation of epitaxial silicon germanium layer on silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/15/10.1063/1.2194893
10.1063/1.2194893
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