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Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001)
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10.1063/1.2189915
/content/aip/journal/apl/88/16/10.1063/1.2189915
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/16/10.1063/1.2189915
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) RHEED intensity for the set of samples grown at different temperatures in the standard continuous MBE mode (CG) as a function of the InAs evaporation time (upper panel), and as a function of the InAs coverage in monolayers. The two onsets for formation of small QDs, at 1.45 ML, and large QDs, at 1.59 ML, are indicated. The former is clearly visible at low temperatures; the latter is commonly assumed as critical thickness for the 2D-3D transition.

Image of FIG. 2.
FIG. 2.

(Color online) RHEED intensities, as a function of the time elapsed from the beginning of the growth (left panel), for the set of samples grown by MBE with growth interruptions (GI) at the specified temperatures. Each growth cycle consisted of of In evaporation followed by 35 of growth interruption while the flux was continuously impinging on the surface. Middle and right panels show the comparison between CG and GI RHEED intensities at low and high temperatures as a function of the InAs evaporation time. Therefore, for GI samples, only the RHEED intensity measured in the of In evaporation of each cycle is reported. Vertical scaling of CG and GI intensities is arbitrary, to emphasize threshold comparison.

Image of FIG. 3.
FIG. 3.

(Color online) RHEED intensity, at 450 and , of CG and GI samples (dotted curves), and number density of small QDs (dashed line with onset at 1.45 ML), and of large QDs (dashed line with onset at 1.59 ML) for the GI sample grown at . The abscissa is the InAs coverage in monolayers. The RHEED intensity of GI samples is that of the of In evaporation (growth) of each cycle, only. Scaling is arbitrary chosen to emphasize the comparison. AFM topographies (not shown) display a final density of QDs lower for GI samples than for CG samples, as well as a morphology strongly dependent on temperature. This is consistent with the fact that the 2D-3D transition is triggered by the energetic, but develops according to the kinetics.

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/content/aip/journal/apl/88/16/10.1063/1.2189915
2006-04-17
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001)
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/16/10.1063/1.2189915
10.1063/1.2189915
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