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Defect characterization of Si-doped films by a scanning near-field optical microscope-induced photoluminescence
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10.1063/1.2190270
/content/aip/journal/apl/88/16/10.1063/1.2190270
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/16/10.1063/1.2190270
/content/aip/journal/apl/88/16/10.1063/1.2190270
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/content/aip/journal/apl/88/16/10.1063/1.2190270
2006-04-18
2014-10-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Defect characterization of Si-doped GaN films by a scanning near-field optical microscope-induced photoluminescence
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/16/10.1063/1.2190270
10.1063/1.2190270
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