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Defect characterization of Si-doped films by a scanning near-field optical microscope-induced photoluminescence
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10.1063/1.2190270
/content/aip/journal/apl/88/16/10.1063/1.2190270
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/16/10.1063/1.2190270
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the tapping-mode SNOM-PL that we developed.

Image of FIG. 2.
FIG. 2.

Near-field PL spectra of a Si-doped film, measured by the pyramidical cantilever with a diameter of .

Image of FIG. 3.
FIG. 3.

Images of the peak intensity in a Si-doped film at ; (a) the image measured without the pyramidical cantilever, and (b) the image measured by the pyramidical cantilever, with a diameter of .

Image of FIG. 4.
FIG. 4.

(a) The image of the peak intensity at in a Si-doped film and (b) CL spectra at bright and dark spots, measured by CL spectroscopy. The CL image at was detected by a photomultiplier detector, scanning the electron beam. CL spectra of the Si-doped film at the bright and dark spots were measured by a CCD detector.

Image of FIG. 5.
FIG. 5.

(a) A cross-section TEM photograph of a Si-doped film and (b) the image of the peak intensity at about , measured by CL spectroscopy. The CL image at was detected by a photomultiplier detector, scanning the electron beam.

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/content/aip/journal/apl/88/16/10.1063/1.2190270
2006-04-18
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Defect characterization of Si-doped GaN films by a scanning near-field optical microscope-induced photoluminescence
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/16/10.1063/1.2190270
10.1063/1.2190270
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