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Excitation mechanism of visible, photoluminescence from Tb-doped silicon oxynitride
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10.1063/1.2195100
/content/aip/journal/apl/88/16/10.1063/1.2195100
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/16/10.1063/1.2195100

Figures

Image of FIG. 1.
FIG. 1.

PL spectra of Tb-doped films after (a) anneal and (b) anneal. The inset shows PL decay traces.

Image of FIG. 2.
FIG. 2.

PL spectra of Tb-free films after (a) anneal and (b) anneal.

Image of FIG. 3.
FIG. 3.

(Color online) Composition and anneal temperature dependence of (a) and (b) band tail PL intensities ( means as deposited, not annealed).

Image of FIG. 4.
FIG. 4.

PLE spectra of mid-O (Tb doped) annealed at 750 and . PLE spectra were monitored at ( related) and (host related). For comparison, PLE spectra of Tb-free sample are also shown.

Tables

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Table I.

Atomic compositions of the films.

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/content/aip/journal/apl/88/16/10.1063/1.2195100
2006-04-18
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Excitation mechanism of visible, Tb3+ photoluminescence from Tb-doped silicon oxynitride
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/16/10.1063/1.2195100
10.1063/1.2195100
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