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Transient bicarrier response in high- dielectrics and its impact on transient charge effects in high- complementary metal oxide semiconductor devices
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10.1063/1.2195901
/content/aip/journal/apl/88/16/10.1063/1.2195901
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/16/10.1063/1.2195901
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic diagrams of the gate voltage scan directions and the definitions of shift for the predischarging and the precharging.

Image of FIG. 2.
FIG. 2.

(Color online) Transient charge trapping and detrapping characteristics for (a) of the thin interface layer and (b) of the thick interface layer. In both cases, significant transient characteristics are observed for by varying base voltage.

Image of FIG. 3.
FIG. 3.

Transient charge trapping and detrapping characteristics for of the thin interface layer with different . shows the significant input signal dependence, especially detrapping characteristics.

Image of FIG. 4.
FIG. 4.

vs with different input signal transitions. For faster input signal transition, (a) electron trapping shows no significant difference. (b) shows significant input signal dependence regardless of carrier types.

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/content/aip/journal/apl/88/16/10.1063/1.2195901
2006-04-20
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transient bicarrier response in high-k dielectrics and its impact on transient charge effects in high-k complementary metal oxide semiconductor devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/16/10.1063/1.2195901
10.1063/1.2195901
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