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SEM photos show SWNTs between the two paired catalyst islands. (a) CNT part of sample A, about seven CNTs grown along the width of bridging catalyst islands of spacing. (b) CNT part of sample B, two CNTs grown along the width of bridging catalyst islands of spacing.
The Raman spectrum of the CNT shown in inset. The RBM line is , corresponding to the tube diameter of . The wave numbers of 301, 520, and are all for silicon. is the band and is the band. Inset: individual SWNT bridging two paired catalyst islands.
(a) The rf measurement configuration using GSG probes. (b) The microscopic photo of the test device. The in/out metal pads are squares with a side length of . The white cirle emphasizes the CNT region. (c) The cross-section view of the CNT region in the test device.
Measured for metal pads with and without carbon nanotubes (pads spacing: ). (a) Power verse frequency. (b) Phase verse frequency. Dotted lines with triangles: pads only. Solid lines with circles: pads with CNTs.
The rf two-terminal equivalent resistance is reduced with the frequency increasing. Inset: A rf model for sample A. is the parasitic capacitance between two metal pads. and are the parasitic capacitance and resistance from the pads, respectively. and are the total capacitance and the resistance from the parallel CNTs themselves, and is the total dc contact resistance between the parallel CNTs and metal contacts. The dotted circle marks the difference between the pads only and pads with CNTs.
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