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Fabrication of field-effect transistor devices with fullerodendron by solution process
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10.1063/1.2198098
/content/aip/journal/apl/88/17/10.1063/1.2198098
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/17/10.1063/1.2198098
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Molecular structure of fullerodendron. Device structures of (b) FET and (c) fullerodendron/polyimide or PVA/PET FET.

Image of FIG. 2.
FIG. 2.

(a) plots of FET. (b) plot at (엯) and plot (▴) at for FET together with linear relationship (solid lines). (c) Temperature dependence of value for FET. In the inset of (c) plot is drawn with the linear relationship (solid line). (d) Temperature dependence of value for fullerodendron thin films. In the inset of (d) plot is drawn with the linear relationship (solid line).

Image of FIG. 3.
FIG. 3.

(Color) (a) plots of fullerodendron/PVA/PET FET. (b) Optical absorption spectrum and (c) AFM image for the thin films of fullerodendron. The red circle refers to the single grain. Cross sectional view (top) along red line. (d) Schematic representation of fullerodendron assembly.

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/content/aip/journal/apl/88/17/10.1063/1.2198098
2006-04-27
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication of field-effect transistor devices with fullerodendron by solution process
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/17/10.1063/1.2198098
10.1063/1.2198098
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