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Nanoscaled interfacial oxide layers of bonded - and -type GaAs wafers
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10.1063/1.2198511
/content/aip/journal/apl/88/17/10.1063/1.2198511
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/17/10.1063/1.2198511
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Current-voltage characteristic of in-phase (90°) and antiphase (180°) bonded two-layer (100) GaAs wafers for both - and -types processed at temperatures of 500 and for in argon ambient.

Image of FIG. 2.
FIG. 2.

(Color online) TEM micriographs of native oxides existing in the interface for -type wafers bonded at (a) antiphase (90°) (b) in-phase (180°).

Image of FIG. 3.
FIG. 3.

(Color online) (a) Schematic plots based on TEM results of native oxides existing in the interface for antiphase and in-phase bonded -type wafers. (b) Schematic plots based on TEM results of native oxides existing in the interface for antiphase and in-phase bonded -type wafers. Grey bubble denotes empty hole.

Image of FIG. 4.
FIG. 4.

(Color online) 3D conductivity contrast of the cross section of antiphase bonded -type wafers treated at for in argon ambient with an applied voltage of .

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/content/aip/journal/apl/88/17/10.1063/1.2198511
2006-04-24
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanoscaled interfacial oxide layers of bonded n- and p-type GaAs wafers
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/17/10.1063/1.2198511
10.1063/1.2198511
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