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Reducing the impurity incorporation from residual gas by ion bombardment during high vacuum magnetron sputtering
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10.1063/1.2193044
/content/aip/journal/apl/88/19/10.1063/1.2193044
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2193044
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Ion energy distributions of the most abundant ions measured with respect to ground at a total pressure of (thin film growth conditions). (a) Positive ions. (b) Negative ions.

Image of FIG. 2.
FIG. 2.

Film composition, H content (at. %) as measured with ERDA, and ratio as measured with XPS vs substrate bias potential.

Image of FIG. 3.
FIG. 3.

Sideview of the topmost surface segment in the MD simulation. The hollow symbol is introduced to discern the bombarding Al atom. (a) Initial configuration and (b) final configuration (after ).

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/content/aip/journal/apl/88/19/10.1063/1.2193044
2006-05-08
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reducing the impurity incorporation from residual gas by ion bombardment during high vacuum magnetron sputtering
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2193044
10.1063/1.2193044
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