1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Subattoampere current induced by single ions in silicon oxide layers of nonvolatile memory cells
Rent:
Rent this article for
USD
10.1063/1.2194819
/content/aip/journal/apl/88/19/10.1063/1.2194819
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2194819
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic representation of a FG memory cell (out of scale).

Image of FIG. 2.
FIG. 2.

Cumulative probability plot for FG cells hit by a single iodine ion immediately after program (closed symbols) and 1.5, 48, and after program. Symbols are experimental data, whereas lines are from calculations.

Image of FIG. 3.
FIG. 3.

Calculated (thick lines) vs experimental (thin lines and symbols) cumulative probability plots for FG cells having oxide thickness of 8.4 and . Data are shown after only (similar data after 1.5 or gave similar fittings).

Image of FIG. 4.
FIG. 4.

Number of defects in the percolation path as a function of oxide thickness ( axis) and of the Gaussian radius of the track itself.

Loading

Article metrics loading...

/content/aip/journal/apl/88/19/10.1063/1.2194819
2006-05-11
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Subattoampere current induced by single ions in silicon oxide layers of nonvolatile memory cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2194819
10.1063/1.2194819
SEARCH_EXPAND_ITEM