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Subattoampere current induced by single ions in silicon oxide layers of nonvolatile memory cells
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10.1063/1.2194819
/content/aip/journal/apl/88/19/10.1063/1.2194819
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2194819
/content/aip/journal/apl/88/19/10.1063/1.2194819
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/content/aip/journal/apl/88/19/10.1063/1.2194819
2006-05-11
2014-09-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Subattoampere current induced by single ions in silicon oxide layers of nonvolatile memory cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2194819
10.1063/1.2194819
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