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Relaxor ferroelectricity in strained epitaxial thin films on substrates
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) (a) In-plane dielectric constant and (b) as a function of temperature of a thick coherently strained film. The data from Ref. 15 of a strained film grown under similar conditions are included in the plots.

Image of FIG. 2.
FIG. 2.

(Color online) Vogel-Fulcher fit to the data in Fig. 1(b).

Image of FIG. 3.
FIG. 3.

(Color online) (a) Hysteresis loops measured at room temperature (●) and in liquid nitrogen at (◇) on the same film as Fig. 1. The large slope is due to uncorrected parasitic capacitance. (b) Remanent polarization (●) and coercive voltage (◇) measured as a function of temperature on the same film as Fig. 1. [ and ]. (Note: the and not going to zero is an indication of loss in the sample.)

Image of FIG. 4.
FIG. 4.

(Color online) SIMS analysis on the same film as Fig. 1 showing diffusion of Sc and Dy from the substrate into the film. The regions of the film, interface, and substrate are labeled on the graph and the region of the interface is highlighted.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Relaxor ferroelectricity in strained epitaxial SrTiO3 thin films on DyScO3 substrates