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Role of oxygen vacancy in interfaces
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10.1063/1.2201050
/content/aip/journal/apl/88/19/10.1063/1.2201050
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2201050
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XPS spectra of (a) Hf and (b) Si core levels of the system as a function of the deposition time (thickness). The equivalent film thicknesses are about 2, 5, 8, 11, 14, and for deposition times of 1, 2, 3, 4, 5, and . No additional oxygen was supplied during the PLD growth. The shift of the Hf main peak is shown with a guideline, which reflects the transition from Hf silicate to oxygen-deficient .

Image of FIG. 2.
FIG. 2.

XPS O spectra of the system prepared under two conditions: (a) no additional supply of oxygen and (b) oxygen supply at a partial pressure of . Each spectrum is fitted by two Voigt functions that correspond to the Hf–O bond and Si–O bond. The intensity ratio is shown at the upper-right corner of each spectra. Si spectra for the same oxygen pressure are shown in the inset of (b).

Image of FIG. 3.
FIG. 3.

Si chemical shift relative to is plotted as a function of the intensity ratio of obtained from Fig. 2. (Here a positive value indicates a lower BE.) The overall footprints are found to depend on the oxygen environment, which means that the oxygen vacancy is an important parameter that determines the chemical states.

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/content/aip/journal/apl/88/19/10.1063/1.2201050
2006-05-08
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Role of oxygen vacancy in HfO2∕SiO2∕Si(100) interfaces
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2201050
10.1063/1.2201050
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