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GaN full-vertical rectifiers employing AlGaN:Si conducting buffer layers on substrates
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10.1063/1.2201554
/content/aip/journal/apl/88/19/10.1063/1.2201554
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2201554
/content/aip/journal/apl/88/19/10.1063/1.2201554
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/content/aip/journal/apl/88/19/10.1063/1.2201554
2006-05-08
2014-10-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaN full-vertical p-i-n rectifiers employing AlGaN:Si conducting buffer layers on n-SiC substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2201554
10.1063/1.2201554
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