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The vertical transport characteristics of conducting buffer layer grown on an -type substrate.
AFM microscopic surface morphology of a full-vertical rectifier structure on an conducting buffer layer grown on an -type (0001) substrate: (a) scan and (b) scan with the -height scale of .
Schematic structure of a full-vertical GaN rectifier used in this work.
Energy band diagram of the epitaxial structure on the substrate in thermal equilibrium: (i) , (ii) unintentionally doped , (iii) , (iv) AlGaN–GaN grading, (v) AlGaN conducting buffer layer, and (vi) substrate.
Current-voltage characteristics of a full-vertical GaN rectifier (log scale).
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