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GaN full-vertical rectifiers employing AlGaN:Si conducting buffer layers on substrates
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10.1063/1.2201554
/content/aip/journal/apl/88/19/10.1063/1.2201554
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2201554
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The vertical transport characteristics of conducting buffer layer grown on an -type substrate.

Image of FIG. 2.
FIG. 2.

AFM microscopic surface morphology of a full-vertical rectifier structure on an conducting buffer layer grown on an -type (0001) substrate: (a) scan and (b) scan with the -height scale of .

Image of FIG. 3.
FIG. 3.

Schematic structure of a full-vertical GaN rectifier used in this work.

Image of FIG. 4.
FIG. 4.

Energy band diagram of the epitaxial structure on the substrate in thermal equilibrium: (i) , (ii) unintentionally doped , (iii) , (iv) AlGaN–GaN grading, (v) AlGaN conducting buffer layer, and (vi) substrate.

Image of FIG. 5.
FIG. 5.

Current-voltage characteristics of a full-vertical GaN rectifier (log scale).

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/content/aip/journal/apl/88/19/10.1063/1.2201554
2006-05-08
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaN full-vertical p-i-n rectifiers employing AlGaN:Si conducting buffer layers on n-SiC substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2201554
10.1063/1.2201554
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