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Interfacial reactions in a /poly-Si gate stack
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10.1063/1.2201891
/content/aip/journal/apl/88/19/10.1063/1.2201891
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2201891
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

High resolution TEM image of the stack showing the (1) Si substrate, (2) , (3) , (4) TiN, and (5) poly-Si regions.

Image of FIG. 2.
FIG. 2.

EELS elemental profiles across the stack (substrate on left hand side), normalized to the same maximum height. The numbered regions are after Fig. 1.

Image of FIG. 3.
FIG. 3.

(a) Experimental Si edges (gray) and MLLS fit to the interface edge (black). (b) Profiles obtained from MLLS fit to Si edges in a spectrum image. The numbered regions are after Fig. 1.

Image of FIG. 4.
FIG. 4.

(a) Experimental N edges (gray) and MLLS fits to the interface spectra (black). (b) Profiles obtained from MLLS fit to N edge spectrum image. The numbered regions are after Fig. 1.

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/content/aip/journal/apl/88/19/10.1063/1.2201891
2006-05-12
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interfacial reactions in a HfO2∕TiN/poly-Si gate stack
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2201891
10.1063/1.2201891
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