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-based edge-coupled photodiode with partially -doped photoabsorption layer for high responsivity and high-power performance
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10.1063/1.2202101
/content/aip/journal/apl/88/19/10.1063/1.2202101
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2202101
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) The conceptual band diagram (a) and top view (b) of the demonstrated photodiode.

Image of FIG. 2.
FIG. 2.

(Color online) Photocurrent (close square) and FWHM (open circle) of the measured impulse responses vs the reverse bias voltages. The inset shows the measured total current (open circle), operation gain (open triangle) under avalanche operation, and the dark current (close square) vs the reverse bias voltages.

Image of FIG. 3.
FIG. 3.

FWHM (open square) and peak output voltages (closed circle) of the measured impulse responses vs the optical pumping power.

Image of FIG. 4.
FIG. 4.

The measured impulse responses of the device under different levels of optical power excitation and a fixed dc bias voltage of . Trace A: . Trace B: . The inset shows the corresponding frequency responses with and without deembedding of the influence of the measurement system.

Image of FIG. 5.
FIG. 5.

The measured impulse responses under a bias voltage and a fixed optical pumping power . The inset shows the corresponding frequency responses with and without deembedding of the influence of the measurement system.

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/content/aip/journal/apl/88/19/10.1063/1.2202101
2006-05-09
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Si∕SiGe-based edge-coupled photodiode with partially p-doped photoabsorption layer for high responsivity and high-power performance
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2202101
10.1063/1.2202101
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