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Cross sectional SEM images of the BZN thin films deposited at (a) and (b) of an oxygen pressure on the copper coated Si substrate. (c) dielectric constant vs frequency measured at and (d) leakage current density vs applied voltage of the BZN thin films as a function of an oxygen partial pressure. Copper was coated on a thick Ti buffer layer to improve the adhesion between copper and Si substrate.
(A) Dielectric properties of the BZN thin films annealed at different temperatures. The BZN films were deposited at . Capacitance vs voltage curves were developed with dc biases ranging from with an oscillator amplitude of and a frequency. The lines are guides for eyes. (B) Leakage current density vs applied voltage of (a) as deposited and postannealed at (b) , (c) , and (d) . The film thicknesses are about .
(A) XPS surface spectra of (a) as-deposited and postannealed at (b) and (c) BZN thin films. (B) Raman spectra of (a) the as-deposited and (b) postannealed at BZN thin films. (C) Plan view TEM images of (a) as-deposited and (c) postannealed BZN thin films at in air; (b) and (d) are SAD patterns taken from (a) and (c), respectively.
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