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Role of elastic anisotropy in the vertical alignment of In(Ga)As quantum dot superlattices
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10.1063/1.2202190
/content/aip/journal/apl/88/19/10.1063/1.2202190
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2202190
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

g002DF CS TEM micrograph of five layers QDs structures, showing the enlargement of the dots during the stacking process.

Image of FIG. 2.
FIG. 2.

g400BF CS TEM image of the designed structure of QDs, showing the shift angle of 23° of the upper dots with regard to the vertical of the buried ones.

Image of FIG. 3.
FIG. 3.

TEM micrographs of QD anticorrelated heterostructures. (a) g002DF CS TEM images of sample C and (b) and (c) are 220 planar view TEM images of samples with one and two layers of InGaAs islands, respectively.

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/content/aip/journal/apl/88/19/10.1063/1.2202190
2006-05-11
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Role of elastic anisotropy in the vertical alignment of In(Ga)As quantum dot superlattices
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2202190
10.1063/1.2202190
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