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(a) Measured reflectance of (dashed line) and Si (solid line). The simulation results are denoted by square points ( and circular points (Si). The dashed and solid lines in the inset denote the simulation reflectance of light from GaN to and Si, respectively. (b) The solid and dashed lines denote the measured and simulation reflectance of the LED structure on , respectively. The dotted line denotes the simulation reflectance when no TiN layer is present.
(Color) (a) Cross-sectional image of III-nitrides grown on Si. Insets show the XRD diffraction patterns of LED grown on Si and the SAED pattern of the interface. Indices 1–6 denote AlN (0,0,0,1), AlN , Si(1,1,1), , TiN(1,1,1), and , respectively. The incident electron beam is parallel to . (b) HR-TEM images near the interface. Misfit dislocations are indicated by “⊥.” (c) HR-TEM images near the interfaces. The dotted line marks the coherent interface of .
(Color) (a) LED grown on at . (b) Electroluminescence spectrum of this device at .
FWHM of x-ray diffraction. The unit is arc sec.
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