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Nitride light-emitting diodes grown on Si (111) using a TiN template
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10.1063/1.2202389
/content/aip/journal/apl/88/19/10.1063/1.2202389
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2202389

Figures

Image of FIG. 1.
FIG. 1.

(a) Measured reflectance of (dashed line) and Si (solid line). The simulation results are denoted by square points ( and circular points (Si). The dashed and solid lines in the inset denote the simulation reflectance of light from GaN to and Si, respectively. (b) The solid and dashed lines denote the measured and simulation reflectance of the LED structure on , respectively. The dotted line denotes the simulation reflectance when no TiN layer is present.

Image of FIG. 2.
FIG. 2.

(Color) (a) Cross-sectional image of III-nitrides grown on Si. Insets show the XRD diffraction patterns of LED grown on Si and the SAED pattern of the interface. Indices 1–6 denote AlN (0,0,0,1), AlN , Si(1,1,1), , TiN(1,1,1), and , respectively. The incident electron beam is parallel to . (b) HR-TEM images near the interface. Misfit dislocations are indicated by “⊥.” (c) HR-TEM images near the interfaces. The dotted line marks the coherent interface of .

Image of FIG. 3.
FIG. 3.

(Color) (a) LED grown on at . (b) Electroluminescence spectrum of this device at .

Tables

Generic image for table
Table I.

FWHM of x-ray diffraction. The unit is arc sec.

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/content/aip/journal/apl/88/19/10.1063/1.2202389
2006-05-10
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nitride light-emitting diodes grown on Si (111) using a TiN template
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2202389
10.1063/1.2202389
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