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Self-assembled endotaxial nanowires with length tunability mediated by a thin nitride layer on (001)Si
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10.1063/1.2202701
/content/aip/journal/apl/88/19/10.1063/1.2202701
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2202701
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) TEM images of the silicide islands on (a) blank (100)Si substrate and (b) nitride-capped (100)Si substrate by RDE at followed by postannealing at the same temperature for .

Image of FIG. 2.
FIG. 2.

(Color online) TEM image of a sample with the removal of surface nitride.

Image of FIG. 3.
FIG. 3.

(a) Bright field image of a single NW with selected-area diffraction pattern as inset; (b) the indexed pattern of the inset of (a) and (c) cross section image of a NW. Labels a, b, and c in (a) represent [011]Si, [001]Si, and [010]Si directions, respectively.

Image of FIG. 4.
FIG. 4.

(Color online) TEM image of the NWs on nitride-capped (100)Si substrate by RDE at 650 °C followed by annealing at the same temperature for .

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/content/aip/journal/apl/88/19/10.1063/1.2202701
2006-05-10
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Self-assembled endotaxial α-FeSi2 nanowires with length tunability mediated by a thin nitride layer on (001)Si
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2202701
10.1063/1.2202701
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