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(Color online) TEM images of the silicide islands on (a) blank (100)Si substrate and (b) nitride-capped (100)Si substrate by RDE at followed by postannealing at the same temperature for .
(Color online) TEM image of a sample with the removal of surface nitride.
(a) Bright field image of a single NW with selected-area diffraction pattern as inset; (b) the indexed pattern of the inset of (a) and (c) cross section image of a NW. Labels a, b, and c in (a) represent Si, Si, and Si directions, respectively.
(Color online) TEM image of the NWs on nitride-capped (100)Si substrate by RDE at 650 °C followed by annealing at the same temperature for .
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