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(Color online) Room temperature reflectivity spectrum of a 40-pair DBR measured at normal incidence. The calculated spectrum is also plotted for comparison.
TEM images of the nitride microcavity showing the good quality of the sample (a). The thin bright layer is the AlN anticracking layer. The image with higher magnification (b) shows the existence of three quantum wells in the GaN cavity layer. The bottom and top DBRs are 40 pairs of . The cavity layer is GaN with three InGaN quantum wells.
(Color online) Room temperature reflectivity spectrum of the nitride cavity measured at normal incidence. The cavity mode is at with a FWHM of , corresponding to a factor of 200.
Time-integrated spontaneous emission spectrum of the quantum wells inserted in the GaN cavity layer surrounding the bottom and top 40-pair DBRs. The cavity resonance mode at with a FWHM of is clearly observed as shown in the figure.
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