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Crack-free fully epitaxial nitride microcavity with distributed Bragg reflectors and quantum wells
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10.1063/1.2202702
/content/aip/journal/apl/88/19/10.1063/1.2202702
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2202702
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Room temperature reflectivity spectrum of a 40-pair DBR measured at normal incidence. The calculated spectrum is also plotted for comparison.

Image of FIG. 2.
FIG. 2.

TEM images of the nitride microcavity showing the good quality of the sample (a). The thin bright layer is the AlN anticracking layer. The image with higher magnification (b) shows the existence of three quantum wells in the GaN cavity layer. The bottom and top DBRs are 40 pairs of . The cavity layer is GaN with three InGaN quantum wells.

Image of FIG. 3.
FIG. 3.

(Color online) Room temperature reflectivity spectrum of the nitride cavity measured at normal incidence. The cavity mode is at with a FWHM of , corresponding to a factor of 200.

Image of FIG. 4.
FIG. 4.

Time-integrated spontaneous emission spectrum of the quantum wells inserted in the GaN cavity layer surrounding the bottom and top 40-pair DBRs. The cavity resonance mode at with a FWHM of is clearly observed as shown in the figure.

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/content/aip/journal/apl/88/19/10.1063/1.2202702
2006-05-10
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Crack-free fully epitaxial nitride microcavity with AlGaN∕GaN distributed Bragg reflectors and InGaN∕GaN quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2202702
10.1063/1.2202702
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