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Role of surface nanovoids on interstitial trapping in He implanted crystalline Si
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10.1063/1.2202745
/content/aip/journal/apl/88/19/10.1063/1.2202745
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2202745
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SIMS profiles of B concentration after implantation at with (dashed line) and after rapid thermal annealing at for in the Cz sample (continuous line). The effect of He implantation ( , ) on the annealed samples is shown for the Cz sample (open circles) and for the SOI structure (closed circles).

Image of FIG. 2.
FIG. 2.

Cross-section transmission electron microscopy of He implanted( , ) and annealed ( , ) Cz (a) and SOI (b) samples. A magnification of the region around half the projected range of He implantation is shown for the SOI structure (c).

Image of FIG. 3.
FIG. 3.

Active B profiles, measured by cross-section scanning capacitance microscopy, in the SOI sample without (continuous line) or with (closed circles) He implantation ( , ) after annealing( , ). The as-implanted SIMS B profile is also shown for reference (dashed line).

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/content/aip/journal/apl/88/19/10.1063/1.2202745
2006-05-10
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Role of surface nanovoids on interstitial trapping in He implanted crystalline Si
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2202745
10.1063/1.2202745
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