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Effect of nitrogen incorporation on the electronic structure and thermal stability of gate dielectric
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10.1063/1.2202752
/content/aip/journal/apl/88/19/10.1063/1.2202752
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2202752
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Valence band and Si photoelectron spectra of (a) pure , (b) after nitridation at , and (c) after vacuum annealing at .

Image of FIG. 2.
FIG. 2.

Angular and annealing-temperature dependences of N photoelectron spectra of film after nitridation.

Image of FIG. 3.
FIG. 3.

Density of states of (a) pure , (b) with O vacancy, (c) with nitridation, (d) with nitridation and O interstitial, and (f) with N interstitial.

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/content/aip/journal/apl/88/19/10.1063/1.2202752
2006-05-08
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2202752
10.1063/1.2202752
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