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curves of the LCMO/SNTO junction at different temperatures, measured under the fields of and . The top insets show the temperature dependence of the in-plane resistance of LCMO and the schematic illustration of the heterojunction, respectively. Bottom inset displays as a function of temperature.
Temperature dependence of at various positive voltages (top panel) and negative voltages (bottom panel).
Bias voltage dependence of MR at different temperatures. Inset: temperature dependence of MR at various voltages.
(a) Schematic DOS of the LCMO/SNTO junction. (b) Band diagram for each region, where and denote the energies of valence band and conduction band, respectively. is the Fermi level. For LCMO, and are associated with and , respectively. is the energy of the band that is jointly determined by and . The gray areas mark the states being occupied by electrons.
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