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Investigation of work function adjustments by electric dipole formation at the gate/oxide interface in preimplanted NiSi fully silicided metal gates
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10.1063/1.2203210
/content/aip/journal/apl/88/19/10.1063/1.2203210
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2203210

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Capacitance-voltage curves of undoped, P-doped, As-doped, and Sb-doped NiSi. (b) Work function tunings in P-, As-, and Sb-doped NiSi FUSI gates with different doses. (Error bar is calculated by ten individual measurements for each work function tuning value.)

Image of FIG. 2.
FIG. 2.

(Color online) Comparison of SIMS of P-doped, As-doped, and Sb-doped NiSi FUSI gates.

Tables

Generic image for table
Table I.

Experimental and calculated work function tuning of NiSi, , and with/without TiN implanted with different dopants and doses. (Error bar is calculated by ten individual measurements for each work function shift value.)

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/content/aip/journal/apl/88/19/10.1063/1.2203210
2006-05-12
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of work function adjustments by electric dipole formation at the gate/oxide interface in preimplanted NiSi fully silicided metal gates
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2203210
10.1063/1.2203210
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