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Dislocation filtering by interfaces for InSb-based devices grown on GaAs (001) substrates
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Image of FIG. 1.
FIG. 1.

(a) XTEM image of an interlayer structure taken under dark-field conditions with the 220 reflection. The image contrast has been enhanced to show dislocations clearly. The positions of the interlayer interfaces are indicated by and . A representative threading dislocation bent at the interface is indicated by an arrow. Schematic illustrations of the layer sequence viewed from the (b) side and (c) front of the specimen show that the interfaces can be observed cross sectionally from the direction.

Image of FIG. 2.
FIG. 2.

(a) Contrast-enhanced XTEM image taken from the specimen tilted by 31° about the horizontal [110] axis as schematically shown in the (b) side and (c) front views. A 220 dark-field condition was used to take this image. The trapezoidal shape of (b) can explain the difference in specimen thickness at the two interlayer interfaces. The positions of the upper and lower interfaces are indicated by and , respectively, in (a).

Image of FIG. 3.
FIG. 3.

TD densities in an triple-interlayer sample (filled circles) and a series of noninterlayer samples (open circles) as functions of layer thickness. The gray rectangles highlight the positions of the three interlayers (in the axis) and the TD reductions due to the interlayers (in the axis). The lines connecting the plots are intended as guides to the eye.


Generic image for table
Table I.

TD densities and their reduction rates at the interfaces between the interlayers and matrix layers. The critical thickness is calculated using the criteria discussed in Ref. 15.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dislocation filtering by AlxIn1−xSb∕AlyIn1−ySb interfaces for InSb-based devices grown on GaAs (001) substrates