1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Selective wavelength tuning of self-assembled InAs quantum dots grown on InP
Rent:
Rent this article for
USD
10.1063/1.2203333
/content/aip/journal/apl/88/19/10.1063/1.2203333
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2203333

Figures

Image of FIG. 1.
FIG. 1.

Room temperature PL spectra of the InAs QDs with thin GaAs interlayers of different thicknesses between the InAs QD and the GaInAsP buffer layers.

Image of FIG. 2.
FIG. 2.

Room temperature PL spectra of the InAs QDs grown on a GaInAsP buffer with thick GaAs and InGaAs interlayers of different indium compositions.

Image of FIG. 3.
FIG. 3.

Room temperature PL spectra of the InAs QDs with and without a thick GaAs interlayer between the InAs QD and the InP buffer layers.

Tables

Generic image for table
Table I.

Calculated and experimental PL peak energies of the InAs QDs grown on a GaInAsP buffer with thin interlayers.

Generic image for table
Table II.

Calculated and experimental PL peak energies of the InAs QDs grown on an InP buffer with and without a thin interlayer.

Loading

Article metrics loading...

/content/aip/journal/apl/88/19/10.1063/1.2203333
2006-05-09
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Selective wavelength tuning of self-assembled InAs quantum dots grown on InP
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2203333
10.1063/1.2203333
SEARCH_EXPAND_ITEM