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Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth
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10.1063/1.2203334
/content/aip/journal/apl/88/19/10.1063/1.2203334
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2203334
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Figures

Image of FIG. 1.
FIG. 1.

Simulated time evolution of the active B and the Si interstitials stored in small clusters and {113} defects, at the EOR region, during annealing of a , B implant into a preamorphized silicon surface. The initial B profile was acquired from SIMS analysis of the same B implant into silicon that was preamorphized with a , Ge implant and annealed at for (SPER). Experimental data for the active B dose are taken from Ref. 3.

Image of FIG. 2.
FIG. 2.

Evolution of the simulated B profile during annealing at after SPER. The initial B profile (after SPER at for ) is taken from SIMS measurements in Ref. 3. The B profile shows a progressive displacement towards the silicon surface in the region of intermediate B concentrations for increased times (10, 60, and ) up to the instant at which B activation becomes a minimum. Longer anneal time results in severe tail diffusion.

Image of FIG. 3.
FIG. 3.

Time evolution of the of a , B implant during annealing at different temperatures ranging from subsequent to SPER. Experimental data (symbols) are taken from Ref. 3.

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/content/aip/journal/apl/88/19/10.1063/1.2203334
2006-05-11
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2203334
10.1063/1.2203334
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