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Photoluminescence properties of self-assembled InN dots embedded in GaN grown by metal organic vapor phase epitaxy
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10.1063/1.2203510
/content/aip/journal/apl/88/19/10.1063/1.2203510
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2203510

Figures

Image of FIG. 1.
FIG. 1.

AFM images of InN dots with different heights: (a) , (b) , (c) , (d) , and (e) .

Image of FIG. 2.
FIG. 2.

The PL spectra measured at for InN bulk and InN dots with different heights: (a) , (b) , (c) , (d) , and (e) . The insert shows the peak energy as a function of dot height. The solid line (dotted line) is calculated by effective mass approximation using as electron effective mass.

Image of FIG. 3.
FIG. 3.

The temperature dependence of the PL peak energy for the InN bulk and the InN dots with average height of .

Image of FIG. 4.
FIG. 4.

Arrhenius plots of the integrated PL intensities for the InN bulk and InN dots.

Tables

Generic image for table
Table I.

The quantitative structural properties and emission energies of InN dots and bulk samples.

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/content/aip/journal/apl/88/19/10.1063/1.2203510
2006-05-10
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence properties of self-assembled InN dots embedded in GaN grown by metal organic vapor phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2203510
10.1063/1.2203510
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