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(Color online) (a) Scanning electron micrograph of a typical doubly clamped silicon nitride beam with a side gate. (b) An illustration of the experiment. The optical spot is focused at an offset of from the beam center of the NEMS resonator. The NEMS center displacement from equilibrium is ; in the illustration, the displacement of the beam is exaggerated. The equilibrium gap is . The origin is at the center of the beam. (c) In-plane fundamental flexural resonance of a and beam for varying dc drive amplitude . The inset displays the change in the resonance frequency with .
(Color online) Normalized optical responsivity of NEMS devices, with dimensions of (a) and and (b) and . The inset shows the normalized reflected power as a function of the spot position . Analytical calculation results for are plotted as dashed lines. In (b), the solid line shows without the contribution of the gate.
(Color online) Peak responsivity contour plot as a function of both beam width and spot diameter .
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