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Electron trap level in a GaN nanorod junction grown by molecular-beam epitaxy
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Cathodoluminescence spectrum of the junction GaN nanorod with an energy of . (b) The cross-sectional view of high-resolution scanning electron microscopy. Cathodoluminescence images at the same region shown in (b) taken at (c) (d) (d). Scale bar is .

Image of FIG. 2.
FIG. 2.

The temperature-dependent characteristic curve of the junction GaN nanorod diode. The temperatures were (closed square), (open circle), and (open triangle) from the above curve. The lower inset shows the SEM image of the sample used in this study. Scale bar is . The higher inset shows the TEM image of the GaN nanorod.

Image of FIG. 3.
FIG. 3.

The deep level transient spectroscopy signal of the GaN nanorod junction diode measured at an emission rate window of . Inset shows the Arrhenius plots of the electron emission rate.

Image of FIG. 4.
FIG. 4.

The characteristic curve of the nanorod measured at . The inset shows the SEM image of the nanorod sample. Scale bar is .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron trap level in a GaN nanorod p-n junction grown by molecular-beam epitaxy