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Controlled single electron transfer between Si:P dots
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Scanning electron microscopy (SEM) image of a Si:P double dot device with three control gates and two SETs. White circles indicate implant regions. (b) SET current as a function of with [horizontal line in (c)] for a double dot device with . (c) SET transconductance (intensity plot) as a function of and for the same sample. was applied to suppress superconductivity at .

Image of FIG. 2.
FIG. 2.

Electron transfer events observed in of (a) left SET and (b) right SET as a function of and for a double dot sample with . (c) Correlated SET output plotted against [horizontal line in (a) and (b)]. Sharp peaks correspond to single electron transfer events. (d) Determination of induced charge due to a single electron transfer event. For the interdot transfer event we deduce . and .

Image of FIG. 3.
FIG. 3.

Measurements using rf-SET detection. (a) Bias spectroscopy of a rf SET in the superconducting state where is the superconducting gap for Al. (b) Single-shot response of the rf SET to a small step in gate voltage creating an induced charge of at the SET island. (c) Sawtooth signal from periodic electron transfer in a double dot with observed in the rf-SET signal (left axis scale) as a function of time while a differential bias voltage (right axis scale) is applied to control gates and . Data are average of 16 traces, each with acquisition time of .


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Scitation: Controlled single electron transfer between Si:P dots