Full text loading...
Simulated (lines) and experimental transfer characteristics, measured in vacuum at , of the as-fabricated devices (open symbols) and the devices aged (closed symbols) for ( , , oxide thickness of , and PMMA thickness of ).
Simulated and experimental transfer characteristics (measured in vacuum at ) of the as-fabricated devices for two different temperatures ( , ).
Experimental values of field effect mobility extracted from the transfer characteristics for the as-fabricated devices (open squares) and the devices aged for (closed squares). Also shown are the values of the band mobility as a function of traps density (top axis) used in the simulations to reproduce the aging effect (open circles) and the linear fit of the data (line).
DOS calculated with temperature method for as-fabricated devices (open circles) and for the device aged for (closed squares). The approximated DOS used for the simulations of the as-fabricated device (line) is also shown.
Parameters used in 2D simulations of devices not aged and aged for .
Article metrics loading...