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Aging effects in pentacene thin-film transistors: Analysis of the density of states modification
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10.1063/1.2203742
/content/aip/journal/apl/88/19/10.1063/1.2203742
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2203742

Figures

Image of FIG. 1.
FIG. 1.

Simulated (lines) and experimental transfer characteristics, measured in vacuum at , of the as-fabricated devices (open symbols) and the devices aged (closed symbols) for ( , , oxide thickness of , and PMMA thickness of ).

Image of FIG. 2.
FIG. 2.

Simulated and experimental transfer characteristics (measured in vacuum at ) of the as-fabricated devices for two different temperatures ( , ).

Image of FIG. 3.
FIG. 3.

Experimental values of field effect mobility extracted from the transfer characteristics for the as-fabricated devices (open squares) and the devices aged for (closed squares). Also shown are the values of the band mobility as a function of traps density (top axis) used in the simulations to reproduce the aging effect (open circles) and the linear fit of the data (line).

Image of FIG. 4.
FIG. 4.

DOS calculated with temperature method for as-fabricated devices (open circles) and for the device aged for (closed squares). The approximated DOS used for the simulations of the as-fabricated device (line) is also shown.

Tables

Generic image for table
Table I.

Parameters used in 2D simulations of devices not aged and aged for .

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/content/aip/journal/apl/88/19/10.1063/1.2203742
2006-05-11
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Aging effects in pentacene thin-film transistors: Analysis of the density of states modification
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/19/10.1063/1.2203742
10.1063/1.2203742
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