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Epitaxial diodes via electrodeposition
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10.1063/1.2161849
/content/aip/journal/apl/88/2/10.1063/1.2161849
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/2/10.1063/1.2161849
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) X-ray diffraction spectra of Bi films electrodeposited from saturated and solutions at on GaAs (111); (b) Bi x-ray pole figure; (c) A plan-view TEM diffraction pattern with the beam normal to the film and substrate surfaces. The extra spots around each of the Bi and GaAs {220} primary spots are due to double diffraction.

Image of FIG. 2.
FIG. 2.

A secondary electron image from scanning electron microscopy of the surface of a (111) film. The triangle shapes indicate the development of a threefold symmetric surface facet consistent with single crystalline Bi. Also visible are rotation boundaries due to twinning.

Image of FIG. 3.
FIG. 3.

Current-voltage characteristics from a typical diode grown at . The extracted barrier height from the intercept of the curve was , with an ideality factor .

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/content/aip/journal/apl/88/2/10.1063/1.2161849
2006-01-09
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial Bi∕GaAs(111) diodes via electrodeposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/2/10.1063/1.2161849
10.1063/1.2161849
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